MG400Q1US65H 2002-10-04 1 toshiba igbt module silicon n channel igbt MG400Q1US65H high power & high speed switching applications high input impedance enhancement-mode the electrodes are isolated from case. equivalent circuit maximum ratings (ta 25c) characteristics symbol rating unit collector-emitter voltage v ces 1200 v gate-emitter voltage v ges 20 v dc i c 400 collector current 1 ms i cp 800 a dc i f 400 forward current 1 ms i fm 800 a collector power dissipation (tc 25c) p c 2650 w junction temperature t j 150 c storage temperature range t stg 40 to 125 c isolation voltage v isol 2500 (ac 1 minute) v terminal 3 screw torque mounting 3 n ? m unit: mm jedec D jeita D toshiba 2-109f1a weight: 465 g (typ.) g (b) e e c
MG400Q1US65H 2002-10-04 2 electrical characteristics (ta 25c) characteristics symbol test condition min typ. max unit gate leakage current i ges v ge 20 v, v ce 0 500 na collector cut-off current i ces v ce 1200 v, v ge 0 4.0 ma gate-emitter cut-off voltage v ge (off) i c 400 ma, v ce 5 v 4.0 7.0 v tc 25c 3.0 4.0 collector-emitter saturation voltage v ce (sat) i c 400 a, v ge 15 v tc 125c 3.6 v input capacitance c ies v ce 10 v, v ge 0, f 1 mhz 34000 pf turn-on delay time t d (on) 0.05 rise time t r 0.05 turn-on time t on 0.10 turn-off delay time t d (off) 0.55 fall time t f 0.05 0.15 switching time turn-off time t off inductive load v cc 600 v, i c 400 a v ge 15 v, r g 2.4 0.60 s forward voltage v f i f 400 a, v ge 0 2.4 3.5 v reverse recovery time t rr i f 400 a, v ge 10 v 0.25 s transistor stage 0.047 thermal resistance r th (j-c) diode stage 0.1 c/w turn-on e on 40 switching loss turn-off e off inductive load v cc 600 v, i c 400 a v ge 15 v, r g 2.4 tc 125c 40 mj note: switching time measurement circuit and input/output waveforms i c r g r g l i f v ge v cc v ce v ge i c 0 0 90% 90% 10% 10% 90% t d (off) t off t f t r t d (on) t on 10% t rr
MG400Q1US65H 2002-10-04 3 collector-emitter voltage v ce (v) i c ? v ce (sat) collector current i c (a) collector-emitter voltage v ce (v) i c ? v ce (sat) collector current i c (a) gate-emitter voltage v ge (v) v ce ? v ge collector-emitter voltage v ce (v) gate-emitter voltage v ge (v) v ce ? v ge collector-emitter voltage v ce (v) gate-emitter voltage v ge (v) i c ? v ge collector current i c (a) forward voltage v f (v) i f ? v f forward current i f (a) 12 v 0 0 200 400 600 800 2 4 6 8 10 common emitter tc 25c v ge 8 v p c 2650 w 10 v 20 v 18 v 15 v 0 0 200 400 600 800 2 4 6 8 10 v ge 8 v 10 v 12 v 20 v 18 v 15 v common emitter tc 125c 0 0 4 8 12 16 4 8 12 16 20 common emitter tc 25c i c 800 a 200 a 400 a 0 0 200 400 600 800 4 8 12 16 common emitter v ce 5 v tc 125c 40c 25c 0 0 200 400 600 800 1 2 3 4 tc 125c 25c common cathode v ge 0 0 0 4 8 12 16 4 8 12 16 20 common emitter tc 125c i c 800 a 200 a 400 a
MG400Q1US65H 2002-10-04 4 switching loss (mj) switching time ( s) collector current i c (a) switching time ? i c switching time ( s) collector current i c (a) switching time ? i c switching time ( s) gate resistance r g ( ) switching time ? r g switching time ( s) gate resistance r g ( ) switching time ? r g collector current i c (a) switching loss ? i c gate resistance r g ( ) switching loss ? r g switching loss (mj) 0.01 10 0.1 1 100 1000 : tc 25c : tc 125c common emitter v cc 600 v v ge 15 v r g 2.4 t r t on t d (on) 1 10 1000 040 20 e on e of f e dsw : tc 25c : tc 125c common emitter v cc 600 v i c 400 a v ge 15 v 100 10 30 0.01 0.1 10 040 20 common emitter v cc 600 v i c 400 a v ge 15 v t of f t d ( off ) t f 1 10 30 : tc 25c : tc 125c 0.01 10 0.1 1 100 1000 t of f t d (off) t f common emitter v cc 600 v v ge 15 v r g 2.4 : tc 25c : tc 125c 1 100 0 500 200 e off e dsw e on : tc 25c : tc 125c common emitter v cc 600 v v ge 15 v r g 2.4 10 100 300 400 0.01 0.1 1 0 40 20 t r t d (on) t on common emitter v cc 600 v i c 400 a v ge 15 v 30 10 : tc 25c : tc 125c
MG400Q1US65H 2002-10-04 5 transient thermal resistance r th (t) (c/w) collector current i c (a) charge q g (nc) v ce , v ge ? q g collector-emitter voltage v ce (v) collector-emitter voltage v ce (v) c ? v ce capacitance c (pf) collector-emitter voltage v ce (v) short circuit soa collector current (x times) collector-emitter voltage v ce (v) reverse bias soa pulse width t w (s) r th (t) ? t w 0 3 6 0 400 1400 200 800 1200 v cc 900 v t j 125c t w 5 s 5 4 2 1 600 1000 0.1 1 1000 0 500 1500 t j 125c v ge 15 v r g 2.4 100 1000 10 100 0.01 10000 100000 1 100 c ies c oes cres common emitter v ge 0 f 1 mhz tc 25c 1000 0.1 10 0.001 0.001 0.1 1 0.1 10 diode stage transistor stage tc 25c 0.01 0.01 1 gate-emitter voltage v ge (v) v ce 0 8 16 4 12 0 0 800 1600 1600 2800 common emitter r l 1.5 tc 25c 400 1200 800 2400 2000 200 v 400 v 600 v
MG400Q1US65H 2002-10-04 6 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
|
